High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitation
نویسندگان
چکیده
Si3N4 thin film grown by low-pressure chemical vapor deposition was measured high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. A survey scan and high-resolution spectra of Si 1s, 2s, 2p, N 1s are reported.
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ژورنال
عنوان ژورنال: Surface Science Spectra
سال: 2022
ISSN: ['1055-5269', '1520-8575']
DOI: https://doi.org/10.1116/6.0001513